<spike_gen> type poisson # Spike generation algorithm offset0 0.0 # Added *before* scaling [0.0] scale 1.0 # Multiplying factor [1.0] offset 0.0 # Added *after* scaling [0.0] toffset 0.040 # (s) Time offset (delay) added to spikes [0.0] # The following parameters allow a refractory period. However, it should # be noted that adding the refractory period will distort the shape of # the actual mean rate. The refractory period is implemented in a constant # rate Poisson process, and this process is then time-warped to create # the inhomogeneous process, but the refractory period is not taken into # account with the time warping. # After each spike, a duration is chosen from a Gaussian distribution for # the refractory period. Negative values are discaarded, and the first # non-negative value is taken. refract_mean 0.006 # (s) Mean of Gaussian duration refractory period refract_sd 0.002 # (s) SD of refractory period </spike_gen>
<spike_gen> type ifc # Spike generation algorithm v_spike 10.0 # (mV) Spike height v_th_x -52.5 # (mV) Spike threshold v_reset_x -57.8 # (mV) Spike reset voltage tau_r_ad 1.00 # (ms) Adaptation rise time tau_f_ad 80.0 # (ms) Adaptation fall time gbar_ad 0.0 # (nS) Adaptation conductance v_ex 0.0 # (mV) Excitatory reversal potential v_in -70.0 # (mV) Inhibitory reversal potential v_ad -90.0 # (mV) Adaptation reversal potential v_leak_x -81.6 # (mV) Leakage reversal potential g_leak_x 18.0 # (nS) Leakage conductance c_x 214.0 # (pF) Membrane capacitance trefr_x 1.5 # (ms) Refractory period gx_scale 2.0 # ( ) Scale excitatory g, before adding bias gx_bias 0.0 # (nS) Constant added to g, after any scaling# Membrane conductance noise type gfg # gfg = Gaussian filtered Gaussian noise mean 0.0 (nS) # mean sd 4.0 (nS) # standard deviation tsd 2.0 (ms) # temporal SD <> grect 1 # half-wave rectify gx, gi after adding noise </spike_gen>